Point-defect avalanches mediate grain boundary diffusion

The relationship between grain boundary structure, defect mobility, and grain boundary sink efficiency

Nanocrystalline materials have received great attention due to their potential for improved functionality and have been proposed for extreme environments where the interfaces are expected to promote radiation tolerance. However, the precise role of the interfaces in modifying defect behavior is unclear. Using long-time simulations methods, we determine the mobility of defects and defect cluster...

Grain Boundary Diffusion and Fractal Interface Concept

On Diffusion-Induced Grain-Boundary Motion

We consider a sharp interface model which describes diffusioninduced grain-boundary motion in a poly-crystalline material. This model leads to a fully nonlinear coupled system of partial differential equations. We show existence and uniqueness of smooth solutions.

Parameters for point-defect diffusion and recombination

Point-defect kinetics are important for understanding and modeling dopant diffusion in silicon. This paper describes models for point-defect transport and recombination used in SUPREM-IV, and does extensive fitting for the model parameters. The experimental data used are from experiments on oxidation-enhanced diffusion (OED). Interstitial traps are shown to be critical for consistent agreement ...

A Numerical Model of Stress Driven Grain Boundary Diffusion

The stress driven grain boundary diffusion problem is a continuum model of mass transport phenomena in microelectronic circuits due to high current densities (electromigration) and gradients in normal stress along grain boundaries. The model involves coupling many different equations and phenomena, and difficulties such as non-locality, stiffness, complex geometry, and singularities in the stre...